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V48C1 3S4YR SMF15AG TSOP4 PC723 C5300 A3150JUA 85810
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 NTE2976 MOSFET N-Channel, Enhancement Mode High Speed Switch
Features: D Low Input Capacitance D Low Static RDS(on) D Fast Switching Time D Guaranteed Avalanche Resistance Applications: D Switching Power Supply of AC 240V Input D High Voltage Power Supply D Inverter Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain-Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Gate-Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current, ID Continuous DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak (Pulse Width 10s, Duty Cycle 1/100) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A Continuous DC Source Current, IS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Repetitive Avalanche Current (Tch = +150C), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Single Avalanche Energy (Tch = +25C), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190mJ Repetitive Avalanche Energy (Tch = +25C), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mJ Operating Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W Dielectric Strength (Terminals-to-Case, AC, 1 minute), Vdis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV Mounting Torque, TOR Maximum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5N*m Recommended . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3N*m
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Forward Transconductance Static Drain-Source On-State Resistance Gate Threshold Voltage Source-Drain Diode Forward Voltage Total Gate Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Time Turn-Off Time Symbol Test Conditions Min 700 - - 3 - 2.5 - - - - - ID = 3A, RL = 50, VGS = 10V - - Typ - - - 5 1.5 3.0 - 35 1250 250 530 60 160 Max - 250 0.1 - 2.0 3.5 1.5 - - - - 110 250 Unit V A A S V V nC pF pF pF ns ns V(BR)DSS ID = 1mA, VGS = 0V IDSS IGSS gfs RDS(on) VTH VSD Qg Ciss Crss Coss ton toff VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V ID = 3A, VDS = 10V ID = 3A, VGS = 10V ID = 1mA, VDS = 10V IS = 3A, VGS = 0V VDD = 400V, VGS = 10V, ID = 6A VDS = 10V, VGS = 0V, f = 1MHz
.402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2)
.173 (4.4) Max .114 (2.9) Max
G
D
S
.531 (13.5) Min
.100 (2.54)
.059 (1.5) Max


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